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基本情况:
姓名:陈立品
学历学位:博士
职称:讲师
研究方向:III-V/Si光电材料与器件
邮箱:lipinchen2021@126.com
所在团队名称:先进半导体器件与集成技术
团队负责人:赵金石
可招收硕博专业:集成电路工程 专硕
项目:
1.国家公派博士留学基金(NO.2017-6254)
2.法国巴黎萨克雷大学博士后基金(NO.16079-01)
代表性论文:
[1] L. Chen, Y. Léger, G. Loget, et al., Epitaxial III-V/Si Vertical Heterostructures with Hybrid 2D-Semimetal/Semiconductor Ambipolar and Photoactive Properties, Advanced Science, 2022, 9(2): 2101661.
[2] L. Chen, O. Skibitzki, L. Pedesseau, et al., Strong Electron–Phonon Interaction in 2D Vertical Homovalent III–V Singularities, ACS Nano, 2020, 14(10): 13127-13136.
[3] L. Chen, L. Pedesseau, Y. Léger, et al., Antiphase boundaries in III-V semiconductors: Atomic configurations, band structures, and Fermi levels, Physical Review B, 2022, 106(16): 165310.
[4] L. Chen, M. Alqahtani, C. Levallois, et al., Assessment of GaPSb/Si tandem material association properties for photoelectrochemical cells, Solar Energy Materials and Solar Cells, 2021, 221: 110888.
[5] L. Chen*, Z. Chen, J. Zhao, et al., Strain-induced band-to-band Fermi level tuning in II-VI and III-V antiphase boundaries, Physical Review B, 2024, 109(8): 085404.
[6] I. Palacio, J. Guevara, L. Chen*, et al., Fermi surface of LaSb2 and direct observation of a CDW transition, Applied Surface Science, 2023, 610: 155477.
[7] L. Chen, B. Fan, W. Yan, et al., Photo-assisted splitting of dielectric microdroplets in a LN-based sandwich structure, Optics Letters, 2016, 19(41): 4558-4561.
[8] L. Chen, S. Li, B. Fan, et al., Dielectrophoretic behaviours of microdroplet sandwiched between LN substrates, Scientific Reports, 2016, 6(6): 29166.
[9] M. Alqahtani, S. Sath, L. Chen, et al., Photoelectrochemical water oxidation of GaPxSb1-x with a direct band gap of 1.65 eV for full spectrum solar energy harvesting, Sustainable Energy & Fuels, 2019, 3, 1720-1729.
[10] C. Cornet, S. Char, I. Lucci, L. Chen, et al., Zinc-blende group III-V/group IV epitaxy: Importance of the miscut, Phys. Rev. Materials, 2020, 4, 053401.
[11] M. Piriyev, G. Loget, Y. Leger, L. Chen, et al., Dual bandgap operation of a GaAs/Si photoelectrode, Sol. Energy Mater. Sol. Cells, 2023, 251, 112138.
[12] M. Piriyev, G. Loget, Y. Léger, L. Chen, et al., Photoelectrode/electrolyte interfacial band lineup engineering with alloyed III–V thin films grown on Si substrates, J. Mater. Chem. C, 2024,12, 1091-1097.
获奖:
1.硕士研究生国家奖学金;
2.河北省优秀硕士论文奖;
3.法国GDR优秀博士论文奖。