基本情况：

姓名：陈立品

学历学位：博士

职称：讲师

研究方向：III-V/Si光电材料与器件

邮箱：lipinchen2021@126.com

所在团队名称：先进半导体器件与集成技术

团队负责人：赵金石

可招收硕博专业：集成电路工程 专硕

项目：

1.国家公派博士留学基金（NO.2017-6254）

2.法国巴黎萨克雷大学博士后基金（NO.16079-01）

代表性论文：

[1] L. Chen, Y. Léger, G. Loget, et al., Epitaxial III-V/Si Vertical Heterostructures with Hybrid 2D-Semimetal/Semiconductor Ambipolar and Photoactive Properties, Advanced Science, 2022, 9(2): 2101661.

[2] L. Chen, O. Skibitzki, L. Pedesseau, et al., Strong Electron–Phonon Interaction in 2D Vertical Homovalent III–V Singularities, ACS Nano, 2020, 14(10): 13127-13136.

[3] L. Chen, L. Pedesseau, Y. Léger, et al., Antiphase boundaries in III-V semiconductors: Atomic configurations, band structures, and Fermi levels, Physical Review B, 2022, 106(16): 165310.

[4] L. Chen, M. Alqahtani, C. Levallois, et al., Assessment of GaPSb/Si tandem material association properties for photoelectrochemical cells, Solar Energy Materials and Solar Cells, 2021, 221: 110888.

[5] L. Chen*, Z. Chen, J. Zhao, et al., Strain-induced band-to-band Fermi level tuning in II-VI and III-V antiphase boundaries, Physical Review B, 2024, 109(8): 085404.

[6] I. Palacio, J. Guevara, L. Chen*_, et al., Fermi surface of LaSb₂ and direct observation of a CDW transition, Applied Surface Science, 2023, 610: 155477.

[7] L. Chen, B. Fan, W. Yan, et al., Photo-assisted splitting of dielectric microdroplets in a LN-based sandwich structure, Optics Letters, 2016, 19(41): 4558-4561.

[8] L. Chen, S. Li, B. Fan, et al., Dielectrophoretic behaviours of microdroplet sandwiched between LN substrates, Scientific Reports, 2016, 6(6): 29166.

[9] M. Alqahtani, S. Sath, L. Chen, et al., Photoelectrochemical water oxidation of GaP_xSb_1-x with a direct band gap of 1.65 eV for full spectrum solar energy harvesting, Sustainable Energy & Fuels, 2019, 3, 1720-1729.

[10] C. Cornet, S. Char, I. Lucci, L. Chen, et al., Zinc-blende group III-V/group IV epitaxy: Importance of the miscut, Phys. Rev. Materials, 2020, 4, 053401.

[11] M. Piriyev, G. Loget, Y. Leger, L. Chen, et al., Dual bandgap operation of a GaAs/Si photoelectrode, Sol. Energy Mater. Sol. Cells, 2023, 251, 112138.

[12] M. Piriyev, G. Loget, Y. Léger, L. Chen, et al., Photoelectrode/electrolyte interfacial band lineup engineering with alloyed III–V thin films grown on Si substrates, J. Mater. Chem. C, 2024,12, 1091-1097.

获奖：

1.硕士研究生国家奖学金;

2.河北省优秀硕士论文奖；

3.法国GDR优秀博士论文奖。