基本情况

姓名：李培

电子邮箱：lipei@email.tjut.edu.cn

学历学位：博士

职称：讲师

研究方向：计算物理，半导体性能计算，半导体缺陷

项目：1.博士后基金，宽禁带半导体界面缺陷，主持,经费数额：8万。

2.博士后国际交流项目，半导体中可用于量子计算的色心的探索，主持,经费数额：30万。

论文：

[1] Han X, Li P, Sui X, et al. Intermediate ground states of hydrogen in LaNiO 2: A first-principles study[J]. Physical Review B, 2023, 108(16): 165145.

[2] Li P, Li S, Udvarhelyi P, et al. Solid state defect emitters with no electrical activity[J]. arXiv preprint arXiv:2310.09849, 2023.

[3] Li P, Udvarhelyi P, Li S, et al. Carbon cluster emitters in silicon carbide[J]. Physical Review B, 2023, 108(8): 085201.

[4] Li S, Pershin A, Li P, et al. Exceptionally strong coupling of defect emission in hexagonal boron nitride to stacking sequences[J]. arXiv preprint arXiv:2307.10401, 2023.

[5] Li P, Jiang X, Huang M, et al. Defect engineering of second-harmonic generation in nonlinear optical semiconductors[J]. Cell Reports Physical Science, 2022, 3(11).

[6] Han X R, Li Y, Li P, et al. A comparable study of defect diffusion and recombination in Si and GaN[J]. Journal of Applied Physics, 2022, 132(4).

[7] Yao P, Song Y, Li P, et al. Ab initio calculation of silicon monovacancy defect in amorphous-SiO2/Si interface[J]. AIP Advances, 2022, 12(5).

[8] Li P, Yan X, Chen J, et al. Electronic and doping properties of hexagonal silicon carbide with stacking faults induced cubic inclusions[J]. Journal of Applied Physics, 2021, 129(23).

[9] Dong P, Li P, Zhang L, et al. Atomistic Mechanism of 4H-Si C/Si O 2 Interface Carrier-Trapping Effects on Breakdown-Voltage Degradation in Power Devices[J]. Physical Review Applied, 2021, 15(3): 034007.

[10] Yan X, Li P, Kang L, et al. First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC[J]. Journal of Applied Physics, 2020, 127(8).

[11] Li P, Chen Z, Yao P, et al. First-principles study of defects in amorphous-SiO2/Si interfaces[J]. Applied Surface Science, 2019, 483: 231-240.

[12] Li P, Song Y, Zuo X. Computational study on interfaces and interface defects of amorphous silica and silicon[J]. physica status solidi (RRL)–Rapid Research Letters, 2019, 13(3): 1800547.

[13] Yue Y, Li P, Song Y, et al. Dissociation characteristics of proton release in a-SiO2 by first-principles theory[J]. Journal of Non-Crystalline Solids, 2018, 486: 1-8.