基本情况：

姓名：赵金石

学历学位：博士

职称：教授 （博导、硕导）

研究方向：先进半导体存储器、类脑芯片等

邮箱：jinshi58@163.com

办公地点：29-325

所在团队名称：先进半导体器件与集成技术

团队负责人：赵金石

可招收硕博专业：

硕士研究生：电子科学与技术；集成电路科学与工程；集成电路工程

博士研究生：材料科学与工程

教育背景：

(1) 2001-03 至 2006-02, 首尔国立大学, 材料工程, 博士

(2) 1999-03 至 2001-02, 高丽大学, 材料工程, 硕士

(3) 1994-09 至 1998-01, 延边大学, 材料与机械, 学士

工作经历：

(1) 2010-03 至 今, 天津理工大学, 集成电路科学与工程学院, 教授

(2) 2006-03 至 2009-12, 三星电子, 半导体研究所, 高级工程师

项目：

(1) 天津市科技计划项目重大专项与工程, 面向野战应用环境的一体化脉冲电场和强光消杀装备研制, 2018.10-2021.09, 200万元, 主持

(2) 天津市学科领军人才计划, 微纳半导体存储器研究, 2017,09-2020.08, 60万元, 主持

(3) 天津市自然科学基金委重点项目, 基于两种不同导电机理的多值阻变存储器研究, 2014.04-2017.03, 20万元, 主持

(4) 光伏降级硅料再利用技术攻关，横向，2022.05-2023.04，500万元，主持

(5) N型光伏硅料低成本技术攻关，横向，2023.05-2023.09，800万元，主持

(6) 半导体硅材料光电性能开发，横向，2024.08-2027.07，500万元，主持

论文：

[1] Xinglong Shao, Jinshi Zhao*, Kailiang Zhang, Ran Chen, Kuo Sun, Changjun Chen, Kai Liu, Liwei Zhou, Jianyun Wang, Chenming Ma, Kyung Jean Yoon, Cheol S Hwang*. Two-Step Reset in the Resistance Switching of the Al/TiOx/Cu Structure. ACS Applied Materials & Interfaces 2013, 5(21): 11265-11270.

[2] Xing Long Shao, Li Wei Zhou, Kyung Jean Yoon, Hao Jiang, Jin Shi Zhao*, Kai Liang Zhang, Sijung Yoo, Cheol Seong Hwang*. Electronic resistance switching in the Al/TiOx/Al structure for forming-free and area-scalable memory. Nanoscale 2015, 7(25): 11063-11074.

[3] Li W. Zhou, Xing L. Shao, Chang J. Chen, Hao Jiang, Jian Y. Wang, Ran Chen, Qing M. Zong, Jin S. Zhao*, Lian R. Lv*. Electroforming-Free and Multilevel Resistance Switching Properties in Al/TiOx/Cu Structure. ECS Solid State Letters 2015, 4(1): P8-P11.

[4] Li Wei Zhou, Xing Long Shao, Xiang Yuan Li, Hao Jiang, Ran Chen, Kyung Jean Yoon, Hae Jin Kim, Kailiang Zhang, Jinshi Zhao*, Cheol Seong Hwang*. Interface engineering for improving reliability of resistance switching in Cu/HfO2/TiO2/Pt structure. Applied Physics Letters 2015, 107(7): 072901.

[5] H. Jiang, X. Y. Li, R. Chen, X. L. Shao, J. H. Yoon, X. W. Hu, C. S. Hwang*, J. S. Zhao*. Bias-polarity-dependent resistance switching in W/SiO2/Pt and W/SiO2/Si/Pt structures. Scientific Reports 2016, 6: 11.

[6] Xiang Yuan Li, Xing Long Shao, Yi Chuan Wang, Hao Jiang, Cheol Seong Hwang*, Jin Shi Zhao*. Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory. Nanoscale 2017, 9(6): 2358-2368.

[7] W. L. Zhao, M. Zhang, P. Pan, D. Y. Song, S. M. Huang, J. Wei, X. Li, W. Qi, K. L. Zhang, J. S. Zhao*, Z. C. Yang*. Design and fabrication of flexible supercapacitor devices by using mesoporous carbon/polyaniline ink. Surface & Coatings Technology 2017, 320: 595-600.

[8] S. F. Wan, Y. Yan, C. Wang, Z. C. Yang, J. S. Zhao*. Impact of potential barrier on electronic resistive switching performance based on Al/TiOx/Al structure. Vacuum 2018, 156: 91-96.

[9] Yichuan Wang, Yu Yan, Chen Wang, Yuting Chen, Junye Li, Jinshi Zhao*, Cheol Seong Hwang*. Controlling the thin interfacial buffer layer for improving the reliability of the Ta/Ta2O5/Pt resistive switching memory. Applied Physics Letters 2018, 113(7): 072902.

[10] Z. C. Yang*, W. L. Zhao, J. Y. Wang, R. Chen, X. Li, T. Xue, K. L. Zhang, J. S. Zhao*. Fabrication of Nickel/Multi-Layer Graphene/Manganese Dioxide Hybrid Film as Enhanced Micro-Supercapacitor Devices. Science of Advanced Materials 2018, 10(2): 215-219.

[11] Jinshi Zhao, Ming Zhang, Shangfei Wan, Zhengchun Yang*, Cheol Seong Hwang*. Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO2/Al/Polyimide Structure. ACS Applied Materials & Interfaces 2018, 10(2): 1828-1835.

[12] Y. T. Chen, Y. Yan, J. W. Wu, C. Wang, J. Y. Lin, J. S. Zhao*, C. S. Hwang*. Electroforming-Free, Flexible, and Reliable Resistive Random-Access Memory Based on an Ultrathin TaOx Film. ACS Applied Materials & Interfaces 2020, 12(9): 10681-10688.

[13] Jin Shi Zhao, Chen Wang, Yu Yan, Yu Ting Chen, Wen Tao Sun, Jun Ye Li, Xiang Yu Wang, Wei Mi, Dian You Song*, Li Wei Zhou*. The effect of high resistivity AlOδ layer on low-power consumption of TaOx based resistive switching memory. Vacuum 2020, 174: 109186.

[14] Jiacheng Li, Chenyang Hao, Shuqin Guo, Yingchen Li, Jiuzhou Ren, Liwei Zhou*, Jinshi Zhao*. Flexible Ta/TiOx/TaOx/Ru memristive synaptic devices on polyimide substrates. Nanotechnology 2021, 32(33): 335205.

[15] Yu Yan, Jia Cheng Li, Yu Ting Chen, Xiang Yu Wang, Gang Ri Cai, Hyeon Woo Park, Ji Hun Kim, Jin Shi Zhao*, Cheol Seong Hwang*. Area-Type Electronic Bipolar Switching Al/TiO1.7/TiO2/Al Memory with Linear Potentiation and Depression Characteristics. ACS Applied Materials & Interfaces 2021, 13(33): 39561-39572.

[16] Jinshi Zhao, Shuqin Guo, Jiacheng Li, Yingchen Li, Liwei Zhou*. Effect of voltage divider layer on self-current compliance resistive switching in Ta/TaOx/ITO structure with an ultra-low power consumption. Applied Physics Letters 2021, 118(4): 042103.

[17] Jinshi Zhao, Jiacheng Li, Chenyang Hao, Qiuyang Li, Wei Mi, Xiaoyong Qiang, Liwei Zhou*. Low pressure thermal annealed fabrication of VO2 on glass with excellent optical properties. Materials Science in Semiconductor Processing 2021, 126: 105658.

[18] Jinshi Zhao, Yingchen Li, Jiacheng Li, Liwei Zhou*. Role and optimization of thermal rapid annealing in Ta/TaOx/Ru based resistive switching memory. Vacuum 2021, 191: 110392.

[19] Dan-ke Chen, Mao-ze Yu, Chen-yang Hao, Wei Mi, Meng Wang, Li-wei Zhou*, Jin-shi Zhao*. The improvement of bilayer VO2/TaOx thermochromic properties for smart window. Journal of Materials Science: Materials in Electronics 2022, 33(32): 24734-24740.

[20] Meng Li, Wei Mi*, Liwei Zhou, Jinshi Zhao*, Xinrong Chen, Jinze Tang, Xinwei Li, Guang Zhang, Kailiang Zhang, Chongbiao Luan, Xingcheng Zhang, Mingsheng Xu. Effect of oxygen flow ratio on crystallization and structural characteristics of gallium oxide thin films. Ceramics International 2022, 48(3): 3751-3756.

[21] Jiuzhou Ren, Hui Liang, Jiacheng Li, Ying Chen Li, Wei Mi, Liwei Zhou, Zhe Sun, Song Xue, Gangri Cai*, Jin Shi Zhao*. Polyelectrolyte Bilayer-Based Transparent and Flexible Memristor for Emulating Synapses. ACS Applied Materials & Interfaces 2022, 14(12): 14541-14549.

[22] Jinshi Zhao, Danke Chen, Chenyang Hao, Wei Mi, Liwei Zhou*. The optimization and role of Ti surface doping in thermochromic VO2 film. Optical Materials 2022, 133: 112960.

[23] Jinshi Zhao, Guojing Li, Yuxiang Cao, Wei Mi, Liwei Zhou*. Highly improved performance in Ta/MoO3/Pt structure by optimizing molybdenum oxide sputtering process for resistive switching memory. Materials Science in Semiconductor Processing 2022, 147: 106771.

[24] Shaohui Kang, Jingzhou Shi, Jiang Feng, Jiaming Fan, Song Xue, Gangri Cai*, Jin Shi Zhao*. Molecular Structure Engineering of Polyelectrolyte Bilayer-Based Memristors: Implications for Linear Potentiation and Depression Characteristics. ACS Applied Nano Materials 2023, 6(5): 3919-3926.

[25] Wentao Li, Yibo Tuo, Wei Mi, Di Wang, Meng Wang, Liwei Zhou*, Jinshi Zhao*. The effect of oxygen affinity electrode Ti on the performance of vanadium oxide-based valence change resistive random access memory. Vacuum 2023, 209: 111794.

[26] Wei Mi, Xinwei Li, Yue Ding, Di Wang*, Mingsheng Xu, Longfei Xiao, Xingcheng Zhang, Xinrong Chen, Bingkun Li, Liyuan Luo, Jinshi Zhao*, Liwei Zhou, Junli Yu. Effects of seed layer thickness and post-annealing process on crystalline quality of β-Ga2O3 films prepared on Si (100) substrate by RF magnetron sputtering. Vacuum 2023, 214: 112235.

[27] Wei Mi, Jinze Tang, Xinrong Chen, Xinwei Li, Bingkun Li, Liyuan Luo, Liwei Zhou, Rongrong Chen, Di Wang*, Jinshi Zhao*. Preparation and UV detection performance of Ti-doped Ga2O3/intrinsic-Ga2O3/p-Si PIN photodiodes. Journal of Materials Science: Materials in Electronics 2023, 34(8): 774.

[28] Jingzhou Shi, Shaohui Kang, Jiang Feng, Jiaming Fan, Song Xue, Gangri Cai*, Jin Shi Zhao*. Evaluating charge-type of polyelectrolyte as dielectric layer in memristor and synapse emulation. Nanoscale Horizons 2023, 8(4): 509-515.

[29] Jinshi Zhao, ShuTong Zheng, Liwei Zhou*, Wei Mi, Yue Ding, Meng Wang. An artificial optoelectronic synapse based on MoOx film. Nanotechnology 2023, 34(14): 145201.

[30] Jiang Feng, Jiaming Fan, Zijian Zhang, Yu Gao, Song Xue, Gangri Cai*, Jin Shi Zhao*. Spin-Coating Deposited SnS2 Thin Film-Based Memristor for Emulating Synapses. Advanced Functional Materials 2024, 2401228.

[31] Wei Mi, Bingkun Li, Rongrong Chen, Caina Luan, Di Wang, Lin’an He, Liwei Zhou, Jinshi Zhao*. Effect of trimethylgallium flow rate on structural and photoelectronic properties of β-Ga2O3 films prepared by MOVPE. Journal of Materials Science: Materials in Electronics 2024, 35(3): 209.

[32] Hongli Sun, Danke Chen, Liwei Zhou, Wei Mi, Di Wang, Linan He, Jinshi Zhao*. The synergistic effect of Ta-doping and antireflective TaOx layer on the thermochromic VO2 thin films for smart windows. Solar Energy Materials and Solar Cells 2024, 275: 113010.

[33] Qi Wang, Zhiyong Hu, Tao Ruan, Jinshi Zhao*. Unsealed piezoelectric MEMS speaker with rigid-flexible composite membrane. Journal of Micromechanics and Microengineering 2024, 34(6): 065003.

[34] Jinshi Zhao, Chenghong Ma, Wei Mi, Di Wang, Yu Zhang, Liwei Zhou*. Optimizing molybdenum oxide based RRAM with vacuum rapid thermal annealing and carbon quantum dots. Vacuum 2024, 225: 113266.

[35] Haoyu Xu, He Liu, Chenming Dong, Chunbo Li, Wei Mi, Di Wang, Linan He, Liwei Zhou*, Jinshi Zhao*. Investigation of self-selective RRAM based on V/ITO structure with rapid thermal annealed ITO for synapse emulation. Materials Science in Semiconductor Processing 2025, 186: 109112..

 

授权专利：

1. Jin Shi Zhao; Jang Eun Lee; In Gyu Baek; Se Chung Oh; Kyung Tae Nam; Eun Kyung Yim ;Semiconductor Devices Having Resistive Memory Element, 2008-9-4, 美国, US7838863B2.

2. Hong Sik Yoon; Jin Shi Zhao; In Gyu Baek; Hyun Jun Sim; Min Young Park ; Semiconductor Memory Device, 2010-6-24, 美国, US8581346B2. 

3. Hong SiK Yoon; Jin Shi Zhao; In Gyu Baek; Hyun Jun Sim; Min Young Park ; Nonvlatile Memory Device, 2010-4-22, 美国, US8331152B2. 

4. Hong Sik Yoon; Jin Shi Zhao; In Gyu Baek; Hyun Jun Sim; Min Young Park ; SemiconductorMemory Device, 2012-9-11, 美国, US8264018B2. 

5. Jin Shi Zhao; Jang Eun Lee ; Bipolar Switching Type Nonvolatile Memory Device Having Tunneling Layer, 2008-2-26, 韩国, KR100809724. 

6. 赵金石; 邵兴隆 ; 一种自发生长金属纳米晶颗粒的P／N 型叠 层阻变存储器, 2014-10-15, 中国,201210410617.1. 

7. 赵金石; 邵兴隆; 马辰铭; 周立伟; 陈长军 ; 一种多阻态阻变存储器, 2015-4-8, 中国,201310078256.X.

8. 赵金石; 张楷亮 ; 一种利用碳纳米管作为固态电解的阻变存储器, 2015-4-15, 中国,201010593266.3.

 

获奖：

1. 天津市高校学科领军人才。

2. 天津市创新团队负责人。