电子科学与技术系
电子科学与技术系
薛玉明(教授)
2023-03-08 15:49      审核人:

薛玉明

教授、硕导、博导

办公地点:29-305

研究方向:太阳能机器人的研究和应用;CIGS(CZTSSe)薄膜太阳电池材料及其器件、系统的研究和应用;光伏发电移动电源的研究和应用;储能电池及其系统的研究和应用;太阳能无人驾驶系统的研究和应用;太阳能可穿戴智能设备的研究和应用。

工作邮箱:orwell.x@163.com

所在团队名称:新能源智能装备研究所

团队负责人:薛玉明

硕士研究生:电子科学与技术;集成电路工程;新一代电子信息技术;光电信息工程
博士研究生:集成电路工程;新能源发电与电能存储

科研项目

1.太阳能机器人、无人机智能装备的开发,横向课题,项目负责人,500万元,2025-2031
2.太阳能无人机与机器人光伏发电系统的开发,横向课题,项目负责人,260万元,2020-2028
3.DD/DA光伏发电系统的开发,横向课题,项目负责人,220万元,2019-2020
4.分布式太阳能发电系统的开发,横向课题,项目负责人,360万元,2017-2019
5.分布式太阳能离网发电系统的开发,横向课题,项目负责人,100万元,2015-2016
6.光伏发电系统的开发,横向课题,项目负责人,81.6万元,2013-2015
7.AlN/Diamond/Si多层膜声表面波器件及其高频特性研究,国家自然科学基金项目,参与项目,2006-2008
8.铜铟硒太阳能薄膜电池试验平台与中试线二期任务的子课题"铜铟硒薄膜电池试验平台与光伏器件开发",国家十五863 重点课题,参与项目,2004-2006
9.铜铟硒太阳能薄膜电池试验平台与中试线一期任务的子课题"铜铟硒太阳能薄膜电池试验平台与光伏器件的开发研究",国家十五863 重点课题,参与项目,2001-2003
10.固态源光硒化法研制铜铟硒薄膜太阳电池,天津市自然科学重点项目,参与项目,2001-2003

代表性论文

[1]TAN Zhiyuan, XUE Yuming, DAI Hongli, WANG Luoxin, HU Xiaofeng, and BAI Xin.Tuning the band gap of the CIGS solar buffer layer Cd1-xZnxS (x=0—1) to achieve high efficiency. OPTOELECTRONICS LETTERS,2024
[2]ZHANG Jiuchao, REN Guangjun, XUE Yuming, XIA Dan, WANG Jiangchao, and HU Zhaoshuo.Improvement of maximum power point tracking in photovoltaic arrays in different environments using hybrid algorithms. PTOELECTRONICS LETTERS,2024
[3]Shuqi Yang,Yuming Xue,Xin Bai.Simulation study on the performance of Cu2ZnSnS4 thinflm solar cells by CdSfree bufer layer Zn1−xMgxO.MRS Advances,2024
[4]XIE XinXUE YumingLü Chaoqun et al.Tuning zinc doping content to optimize optical and structural properties of Cd1-xZnxS buffer layers.Optoelectronics Letters,2023
[5]SUN HangXUE YumingWANG Luoxin et al. Research on the properties of ZnO1-xSx thin films modified by sulfur doping for CIGS solar cells.Optoelectronics Letters,2022
[6]WANG Lang,XUE Yuming,WANG Zhiyong et al. Effects of ammonia concentration on morphology,omposition and optical properties of ZnO1-xSx thin films of Cu(In, Ga)Se2 solar cells. Optoelectronics Letters,2022
[7]Yuming Xue,Shipeng Zhang, Dianyou Song et al. Effect of concentration of cadmium sulfate solution on structural,optical and electric properties of Cd 1-x Zn x S thin films.Journal of Semiconductors,2021
[8]Yuming Xue, Xinyu Wang, Liming Zhang et al.Chemical Bath Deposition of Cd1−xZnxS as Buffer Layer in CIGS Solar Cell.Distributed Generation & Alternative Energy Journal,2021
[9]Shaojun Feng , Penghai Li, Yuming Xue et al.Characteristics and design key points of small CIGS solar UAV. Earth and Environmental Science,2020
[10]Liming Zhang, Yuming Xue, Shaojun Feng et al.Influence of ammonia concentration on the structural, composition and optical properties of  CdZnS thin films.Materials Science in Semiconductor Processing,2019
[11]Sai Liu,Yuming Xue,Rui Jia et al. Design and preparation of integrated voltage divider for silicon drift detector by ion  implantation. Journal of Materials Science: Materials in Electronics,2019
[12]SUN Hao-yu, LI Peng-hai, XUE Yu-ming et al. Effect of MoSe2on the performance of CIGS solar cells. Optoelectronics Letters,2019
[13]Yuming Xue, Bingbing Yu,Wei Li et al. Effect of annealing atmosphere on properties of Cu2ZnSn(S,Se)4 thin films.Superlattices and Microstructures,2017
[14]LI Peng-yu, XUE Yu-ming, LIU Hao et al.Research on structure of Cu 2 ZnSn(S,Se) 4 thin films withhigh Sn-related phases.Optoelectronics Letters,2016
[15]XUE Yu-ming, GAO Lin, YIN Fu-hong et al. Research on structural characteristics of large-scale CdS thin films deposited by CBD under low  ammonia condition. Optoelectronics Letters,2015
[16]刘浩,薛玉明,乔在祥等.铜锌锡硫薄膜材料及其器件应用研究进展.物理学报,2014
[17]ZHANG Jia-wei, XUE Yu-ming,LI Wei et al. Morphology of CIGS thin films deposited by single-stage process and three-stage process at low temperature.Optoelectronics Letters.2013

专利

1.中国发明专利,一种铜铟镓硒太阳电池器件及其制备方法,第一发明人,专利号ZL201310241273.0,2013
2.中国发明专利,一种铜铟镓硒太阳电池器件及其制备方法,第一发明人,专利号ZL201310241257.1,2013
3.中国发明专利,一种铜铟镓硒太阳电池器件及其制备方法,第一发明人,专利号ZL201310241287.2,2013
4.中国发明专利,一 种 p-n- 衬 底 型铟镓氮多层薄膜结构光伏器件及制备,第一发明人,专利号ZL201110204109.3,2013
5.中国发明专利,一种具有较大带隙的氮铟镓薄膜及其制备方法,第一发明人,专利号ZL201110087842.1,2013
6.中国发明专利,一种具有较小带隙的氮铟镓薄膜及其制备方法,第一发明人,专利号ZL 201110087828.1,2013
7.中国发明专利,一种铜铟镓硒太阳电池器件及其制备方法,申请号2016080900988400,第一发明人,2016
8.中国发明专利,一种基于复合衬底的掺钠铜铟镓硒薄膜及其制备方法,申请号2016080201212470,第一发明人,2016
9.中国发明专利,一种CIGS太阳电池吸收层的制备方法,申请号2016080201263510,第一发明人,2016
10.中国发明专利,一种后掺钠铜铟镓硒太阳电池器件及其制备方法,申请号2016080201212980,第一发明人,2016