基本情况：

姓名：孙正

学历学位：博士

职称：副教授

研究方向：半导体薄膜材料与器件

邮箱：sz_tjut@163.com

办公地点：29-304

所在团队名称：微纳电子器件与系统

团队负责人：张楷亮

可招收硕博专业：电子科学与技术，集成电路

项目：

国家自然科学基金青年科学基金项目，基于同步辐射和晶向可控生长的高储能密度弛豫铁电薄膜制备与性能优化研究，主持

论文：

1. Effect of argon-oxygen ratio on dielectric and energy storage properties of Ba(Z_r0.35Ti_0.65)O₃ thin films， Ceramics International 48 (2022) 29951–29958

2.Effects of 0.5B₂O₃–0.5CuO on the microwave dielectric properties of low- temperature sintered ZZNT ceramics，Ceramics International， 48 (2022) 7153–7158

3. Effects of Mn substitution on microwave dielectric properties of trirutile-type ceramics，Materials Letters 261 (2020) 126994

4. Relaxor behavior and tunable property of lead‑free Li+‑doped Ba_0.9Ca_0.1Zr_0.2Ti_0.8O₃ ceramics， Journal of Materials Science: Materials in Electronics (2019) 30:15064–1507

5．Relaxor behaviour and nonlinear dielectric properties of lead-free BZT–BZN composite ceramics，Ceramics International 47 (2021) 2086–2093.

6. Energy storage properties and relaxor behavior of lead-free Ba_1-xSm_2x/3Zr_0.15Ti_0.85O₃ ceramics, Dalton Transactions, 2017,46(41)14341-14347.

7．Dielectric properties and diffuse phase transition behavior of CuO-doped lead-free Ba(Zr_xTi_1-x)O₃ ceramics Ceramics International 2016, 42(10): 12246-12252.

8. Influence of Nb₂O₅ addition on dielectric properties and diffuse phase transition behavior of BaZr_0.2Ti_0.8O₃ ceramics Ceramics International 2016, 42(9): 10833- 10837.

专利：

1. 钡基钙钛矿陶瓷材料、其制备方法及应用，发明专利，天津理工大学；专利号：ZL201911033940 .X。

2. 高储能密度铁电薄膜材料的制备方法及应用，发明专利，天津理工大学；专利号：CN202210620571.X

3. 一种无铅型高储能密度铁电薄膜的制备方法, 发明专利，天津理工大学；专利号：CN202211045454.1