电子信息工程系
电子信息工程系
赵金石(教授)
2026-03-27 14:44      审核人:

赵金石

教授、硕导、博导

办公地点:29-325

研究方向:先进半导体存储器、类脑芯片等

工作邮箱:jinshi58@163.com

所在团队名称:先进半导体器件与集成技术

团队负责人:赵金石

硕士研究生:电子科学与技术;集成电路科学与工程;集成电路工程;通信工程(含宽带网络、移动通信等)

博士研究生:材料科学与工程;电子信息工程

个人简介

        赵金石,工学博士,毕业于韩国首尔大学,现任天津理工大学集成电路科学与工程学院院长,兼任首尔大学兼职教授。现为天津市政协常委、西青区政协副主席,入选天津市高等学校学科领军人才,兼任天津市真空学会副理事长,中国电子学会高校电子信息学科建设推进委员会委员,并担任天津市创新人才推进计划重点领域团队负责人。
        曾在韩国三星电子半导体研究所和首尔大学半导体研究所从事科研工作,参与高集成度RRAM器件关键工艺研发,积累了丰富的国际化科研背景与产业协同研发经验。长期深耕于先进半导体器件与集成芯片技术领域,研究方向涵盖新型半导体存储器、类脑芯片、神经形态计算等前沿方向。
        主持和参与包括国家自然科学基金、天津市重大专项、天津市自然科学基金重点项目、韩国科技部重大专项在内的多项纵向科研课题;同时承担三星电子、海力士(Hynix)、JuSeng Engineering等企业委托的横向项目,具备产学研一体化组织实施能力。
        在《Advanced Functional Materials》、《Angewandte Chemie International Edition》、《Chemical Engineering Journal》、《ACS Applied Materials & Interfaces》、《Applied Physics Letters》等国际权威期刊发表SCI论文140余篇,论文被引累计逾2200次,H指数为25。已申请与授权国际/国内发明专利30余项,具备突出的原创技术创新与成果转化能力。致力于服务国家战略需求与地方产业发展,积极推动集成电路核心技术攻关与人才培养,为区域高端集成电路产业体系建设提供有力支撑。

科研项目

(1) 高效率低成本晶硅太阳能电池关键硅材料提纯、高效利用及循环再生技术研发,横向,2025.11-2028.10,500万,主持
(2) 天津市科技局-京津冀自然科学基金合作专项,大模型赋能下基于工业互联网的设备预测性维护系统研究,2025.10-2028.9,60万元,主持
(3) 天津市科技局-技术创新引导专项(企业科技特派员项目),柔性阻变存储器构建及其性能研究,2025.10-2027.9,5万元,主持
(4) 国家重点实验室开放课题,二维h-BN辅助高质量可转移β-Ga2O3外延薄膜的制备与研究,2025.9-2027.9,10万元,主持
(5) 多模态感知融合的无人机智能运维系统:故障诊断与自主充电协同优化,横向,2025.07-2-28.06,550万,主持
(6) 半导体硅材料光电性能开发,横向,2024.08-2027.07,500万元,主持
(7) N型光伏硅料低成本技术攻关,横向,2023.05-2023.09,800万元,主持
(8) 天津市科技计划项目重大专项与工程, 面向野战应用环境的一体化脉冲电场和强光消杀装备研制, 2018.10-2021.09, 200万元, 主持
(9) 天津市学科领军人才计划, 微纳半导体存储器研究, 2017,09-2020.08, 60万元, 主持
(10) 天津市自然科学基金委重点项目, 基于两种不同导电机理的多值阻变存储器研究, 2014.04-2017.03, 20万元, 主持

代表性论文

[1]Stabilization the Electrode/Electrolyte Interphase by Reconstructing the Solvation Structure of Eutectic-Based Polymer Electrolyte. Man Guo, Shilun Gao*, Yingli Wang, Kai Liu, Jinshi Zhao*, Zixuan Zhang, Yiheng Li, Chunliang Li, Lianqi Zhang*. Advanced Functional Materials, 2026, 36.4: e09739.
[2]Solution-processed SnO2/SnS2 Bilayer-Based Robust Memristors for Reliable Neuromorphic Computing Xiuyang Tang, Xinming Ma, Sizhu Ha, Weifang Sun, Niwei He, Song Xue, Gangri Cai*, Jin Shi Zhao*. Solution-processed SnO 2/SnS 2 bilayer-based robust memristors for reliable neuromorphic computing. Nanoscale Horizons, 2026.
[3]The Investigation of RRAM Devices Based on Mo/TaOx/ITO Structure with Ultra-Low Operating Voltage. Jinshi Zhao, Xinkai Zhu, Yuxiang Cao, Di Wang, Lin’an He, He Liu, Chenming Dong, Chunbo Li, Qi Wang*, Liwei Zhou*. Applied Surface Science, 2026,166728.
[4]Fabrication and Characterization of Spinel Zn2GeO4 Epitaxial Thin Films. Hanpeng Liu, Kai Niu, Liang Wang, Lin'an He*, Wei Mi, Di Wang, Liwei Zhou, Yan Zhu*, Juan Wang, Xingcheng Zhang, Rongrong Chen, Jinshi Zhao*, Ceramics International, 2026, 52.1:164-170.
[5]Preparation and characterization of zirconium-doped indium oxide conducting films with high infrared transparency. Hanpeng Liu, Liang Wang, Lin'an He, Wei Mi, Di Wang, Liwei Zhou, Yan Zhu, Juan Wang, Xingcheng Zhang, Rongrong Chen, Kai Niu, Jinshi Zhao*. Applied Physics Letters, 2025, 127.23.
[6]Fully Solution-Processed Flexible and Self-Rectifying Memristor for Synapse Emulation. Yu Gao, Zijian Zhang, Xinming Ma, Xiuyang Tang, Lipin Chen, Song Xue, Gangri Cai*, Jin Shi Zhao*. ACS applied electronic materials, 2025, 7.5: 2075-2083.
[7]DUV-NIR Dual-Band Photodetector Based on Ga2O3/GaAs Heterogeneous Junctions. Chenrui Shang, Rongrong Chen, Wei Mi, Jinpei Wang, Qing Li, Jinlong Liang, Xiangcan Kong, Di Wang, Lin'an He, Liwei Zhou, Zhaolong Chen*, Jinshi Zhao*. Materials Science in Semiconductor Processing, 2025, 192:109472.
[8]Structural and Optical Properties of High Crystalline Quality Orthorhombic К-Ga2o3 Heteroepitaxial Films Grown by HVPE. Jinlong Liang, Wei Mi*, Qing Li, Di Wang, Lin’an He, Rongrong Chen, Liwei Zhou, Yan Peng, Mingsheng Xu, Longfei Xiao, Xingcheng Zhang, Chongbiao Luan, Jinshi Zhao*. Applied Physics, 2025, 131:797.
[9]Liquid-phase deposited 2D SnS-SnS2 composite films for memristor and synapse emulation. Zijian Zhang, Xiuyang Tang, Yu Gao, Xinming Ma, Kaihan Chang, Lipin Chen, Song Xue, Gangri Cai*, and Jin Shi Zhao*. Chemical Engineering Journal, 2025, 168557.
[10]Association Properties of MoS2-ZnO Nanocomposites on Si Substrate for Water Splitting Applications. Zewen Chen, Yukai Mao, Lina Sang, Qi Wang, Gangri Cai, Lipin Chen*, Jinshi Zhao*. Materials Today Communications, 2025, 45: 112344.
[11]Low-temperature Growth of Β-Ga2o3 Film on MgO (100) Substrate by HVPE for Solar-Blind Ultraviolet Imaging Photodetector Array. Qing Li, Wei Mi*, Di Wang, Rongrong Chen, Lin'an He, Yan Zhu, Juan Wang, Liwei Zhou, Yan Peng, Mingsheng Xu, Longfei Xiao, Xiaochen Ma, Xiaojie Qiao, Jinshi Zhao*. Journal of Alloys and Compounds, 2025, 1048: 185150.
[12]Investigation of Self-Selective RRAM Based on V/ITO Structure with Rapid Thermal Annealed ITO for Synapse Emulation. Haoyu Xu, He Liu, Chenming Dong, Chunbo Li, Wei Mi, Di Wang, Linan He, Liwei Zhou*, Jinshi Zhao*. Materials Science in Semiconductor Processing, 2025, 186: 109112.
[13]Enhanced Performance of Self-Selective RRAM Devices in V/TaOx/Pt Structure. Haoyu Xu, Hongli Sun, He Liu, Chenming Dong, Chunbo Li, Wei Mi, Di Wang, Linan He, Liwei Zhou*, Jinshi Zhao*. Journal of physics D: Applied physics, 2025, 58.7:075104.
[14]Transport Anisotropy in Semimetallic and Stoichiometric Wurtzite Inversion Domain Boundaries. Lipin Chen, Laurent Pedesseau, Jinshi Zhao*, Charles Cornet, Physical Review B, 2025, 111:245302.
[15]Fabrication and characterization of heteroepitaxial Zn2GeO4 films on sapphire via radio frequency magnetron sputtering. Kai Niu, Xueting Du, Wei Mi, Di Wang, Lin'an He*, Liwei Zhou, Yan Zhu*, Juan Wang, Xingcheng Zhang, and Jinshi Zhao*. Applied Physics Letters, 2025, 126.3:032102.
[16]Improvement of MoOx-based RRAM Performance by Rapid Thermal Annealing Process and Its Application in Artificial Synapse. Xiaolei Xu, Wei Mi, Di Wang, Lin’an He, He Liu, Chenming Dong, Chunbo Li, Liwei Zhou*, Jinshi Zhao*. Journal of Materials Science, 2025, 60:2933-2947.
[17]Fast Response Self-Powered Solar-Blind UV Photodetector Based on NiO/Ga2O3 P-N Junction. Jinpei Wang, Qing Li, Wei Mi*, Di Wang*, Mingsheng Xu, Longfei Xiao, Xingchen:g Zhang, Chongbiao Luan, Jinshi Zhao*. Materials Science in Semiconductor Processing, 2025, 186: 109084.
[18]Deep eutectic solvent binder facilitating reaction kinetics of lithium sulfur batteries. Chen Li, Zhaokun Wang, Zuohang Li, Junshi Zhang, Su Wang, Yue Ma*, Xixi Shi, Hongzhou Zhang, Dawei Song, Jinshi Zhao*, and Lianqi Zhang*. Angewandte Chemie International Edition, 2025, 64.39: e202516009.
[19]Spin‐coating deposited SnS2 thin film‐based memristor for emulating synapses. Jiang Feng, Jiaming Fan, Zijian Zhang, Yu Gao, Song Xue, Gangri Cai*, and Jin Shi Zhao*. Advanced Functional Materials, 2024, 34.36: 2401228.
[20]PEDOT-ZnO Nanoparticle Hybrid Film-Based Memristors for Synapse Emulation in Neuromorphic Computing Applications. Jiaming Fan, Jiang Feng, Yu Gao, Zijian Zhang, Song Xue, Gangri Cai*, Jin Shi Zhao*. ACS applied materials & interfaces, 2024, 7.5:5661-5668.

专利专著

1. 朱岩;王淑萍;王娟;弭伟;何林安;王迪;赵金石,一种吸收截止波长可调的InGaAs光电探测器及其制备方法与应用,20250919,CN121240584A
2. 朱岩;王淑萍;王娟;弭伟;何林安;王迪;赵金石,一种InP基2μm波段应力平衡InAlAs-InGaAs雪崩光电探测器及其制备方法,20250919,CN121240585A
3. 张联齐;李贻衡;高世伦;赵金石;刘凯,一种用于锂离子电池的聚合物固态电解质及其制备方法,20251205,CN121618040A
4. 李春波;赵金石;周立伟;刘赫;董晨名,一种高效率硅废料提纯装置,20240614,CN222724485U
5. 弭伟;李秉坤;赵金石;肖龙飞;李信伟;唐金泽;陈新荣;李萌;周保增;罗丽园,一种基于Si衬底的高质量大尺寸氧化镓薄膜及其制备方法,20220708,CN115172145A
6. 赵金石; 邵兴隆; 马辰铭; 周立伟; 陈长军 ; 一种多阻态阻变存储器, 2015-4-8, 中国,201310078256.X.
7. 赵金石; 邵兴隆 ; 一种自发生长金属纳米晶颗粒的P/N 型叠 层阻变存储器, 2014-10-15, 中国,201210410617.1.
8. Hong Sik Yoon; Jin Shi Zhao; In Gyu Baek; Hyun Jun Sim; Min Young Park ; SemiconductorMemory Device, 2012-9-11, 美国, US8264018B2.
9. Jin Shi Zhao; Jang Eun Lee; In Gyu Baek; Se Chung Oh; Kyung Tae Nam; Eun Kyung Yim ;Semiconductor Devices Having Resistive Memory Element, 2008-9-4, 美国, US7838863B2.
10. Hong Sik Yoon; Jin Shi Zhao; In Gyu Baek; Hyun Jun Sim; Min Young Park ; Semiconductor Memory Device, 2010-6-24, 美国, US8581346B2.
11. Hong SiK Yoon; Jin Shi Zhao; In Gyu Baek; Hyun Jun Sim; Min Young Park ; Nonvlatile Memory Device, 2010-4-22, 美国, US8331152B2.
12. Jin Shi Zhao; Jang Eun Lee ; Bipolar Switching Type Nonvolatile Memory Device Having Tunneling Layer, 2008-2-26, 韩国, KR100809724.

获奖

1. 天津市高校学科领军人才。
2. 天津市创新团队负责人。