性别

男

学历学位

博士

职称

副教授

导师类型

硕导

联系电话

13602176911

所属学院

集成电路科学与工程学院

Email

lwzhou@email.tjut.edu.cn

人才称号

学术兼职

招生专业

电子科学与技术

研究方向

阻变存储器；VO₂基智能窗

代表性学术成果：

代表科研项目：

1. VO₂基智能窗多层膜微纳米结构设计及其性能优化，2021-2023，国家自然科学基金青年科学基金

科研论文：

1.  Role and optimization of thermal rapid annealing in Ta/TaO_x/Ru based resistive switching memory, Vacuum, 2021, 191, 110392.

2.  Low pressure thermal annealed fabrication of VO₂ on glass with excellent optical properties, Materials Science in Semiconductor Processing, 2021, 126, 105658.

3. Effect of voltage divider layer on self-current compliance resistive switching in Ta/TaO_x/ITO structure with an ultra-low power consumption, Applied Physics Letters, 2021, 118, 042103.

4. Flexible Ta/TiO_x/TaO_x/Ru memristive synaptic devices on polyimide substrates, Nanotechnology, 2021, 32, 335205.

5. The effect of high resistivity AlO_δ layer on low-power consumption of TaO_x based resistive switching memory, Vacuum, 2020, 174, 109186.

6. Double-layer VO₂ thin film patterned by SiO₂ spheres with improved thermochromic properties for smart windows, Applied Physics A, 2019, 125, 19.

7. Modified color for VO₂/Au/VO₂ sandwich structure-based smart windows, Applied Physics A, 2018, 124, 505.

8. Enhanced luminous transmittance of thermochromic VO₂ thin film patterned by SiO₂ nanospheres, Applied Physics Letters, 2017, 110, 193901.

9. Interface engineering for improving reliability of resistance switching in Cu/HfO₂/TiO₂/Pt structure, Applied Physics Letters, 2015, 107, 072901.

10. Electroforming-Free and Multilevel Resistance Switching Properties in Al/TiO_x/Cu Structure, ECS Solid State Letters, 2015, 4, 8-11.