基本情况：

姓名：赵金石

学历学位：博士

职称：教授 （博导、硕导）

研究方向：先进半导体存储器、类脑芯片等

邮箱：jinshi58@163.com

手机号：13752613214

办公地点：29-325

所在团队名称：先进半导体器件与集成技术

团队负责人：赵金石

可招收硕博专业：电科学硕，集成电路科学与工程学硕、集成电路工程专硕，新一代信息技术专硕

项目：

（1） 天津金沃能源科技股份有限公司, 横向, H20220200, 光伏降级硅材料再利用技术攻关, 2022-05 至2023-04, 500万元, 在研, 主持；

（2） 天津市科技局, 天津市科技计划项目重大专项与工程, 18ZXJMTG00230, 面向野战应 用环境的一体化脉冲电场和强光消杀装备研制, 2018-10 至 2021-09, 200万元, 结题, 主持；

（3） 天津市教委, 天津市学科领军人才计划, 无, 微纳半导体存储器研究, 2017-09 至 2020-08, 60万元,结题, 主持；

（4） 天津市自然科学基金委, 重点项目, 14JCZDJC31500, 基于两种不同导电机理的多值阻变存储器研究,2014-04 至 2017-03, 20万元, 结题, 主持；

（5）“高集成度FRAM所需的低温MOCVD-PZT工艺研究”，韩国三星电子。

（6）“低功耗PRAM集成工艺研究”， Hynix。

论文：

1.Jingzhou Shi,Shaohui Kang,Jiang Feng,Jiaming Fan,Song Xue,Gangri Cai* andJin Shi Zhao*,“Evaluating charge-type of polyelectrolyte as dielectric layer in memristor and synapse emulation”,Nanoscale Horizons,2023, 10.1039/d2nh00524g.

2.Shaohui Kang, Jingzhou Shi, Jiang Feng, Jiaming Fan, Song Xue, Gangri Cai*,andJin Shi Zhao*,“Molecular Structure Engineering of Polyelectrolyte Bilayer-Based Memristors: Implications for Linear Potentiation and Depression Characteristics”,ACS Applied Nano Materials,2023,6:3919-3926.

3.Jinshi Zhao; Shutong Zheng; Liwei Zhou; Wei Mi; Yue Ding; Meng Wang,“An artificial optoelectronic synapse based on MoOx film”，Nanotechnology, 2023, 34(14):145201.

4.Wentao Li, Yibo Tuo,Wei Mi,Di Wang,Meng Wang,Liwei Zhou*,Jinshi Zhao*,“The effect of oxygen affinity electrode Ti on the performance of vanadium oxide-based valence change resistive random access memory”,Vacuum, 2023,209:111794.

5.Meng Li, Wei Mi*, Liwei Zhou,Jinshi Zhao*, Xinrong Chen, Jinze Tang, Xinwei Li, Guang Zhang, Kailiang Zhang, Chongbiao Luan, Xingcheng Zhang, Mingsheng Xu,“Effect of oxygen flow ratio on crystallization and structural characteristics of gallium oxide thin films”,Ceramics International,2022，48(3)：3751-3756.

6.Ren, Jiu Zhou; Liang, Hui; Li, Jia Cheng; Li,Ying Chen; Mi, Wei; Zhou, Li Wei; Sun, Zhe, Song, Xue; Cai, Gang Ri*; andZhao, Jin Shi*, “Polyelectrolyte Bilayer-Based Transparent and Flexible Memristor for Emulating Synapses”,ACS Applied Materials & Interfaces, 2022, 14(12): 14541–14549.

7.Jinshi Zhao, Guojing Li, Yuxiang Cao, Wei Mi, Liwei Zhou*, “Highly improved performance in Ta/MoO3/Pt structure by optimizing molybdenum oxide sputtering process for resistive switching memory”,Materials Science in Semiconductor Processing,2022, 147:106771.

8.Jinshi Zhao, Danke Chen, Chenyang Hao, Wei Mi, Liwei Zhou*,“The optimization and role of Ti surface doping in thermochromic VO2 film”,Optical Materials, 2022,133:112960.

9.Danke Chen, Mao-ze Yu, Chenyang Hao, Wei Mi, Meng Wang, Li-wei Zhou*,Jinshi Zhao*, The improvement of bilayer VO2/TaOx thermochromic properties for smart window”,Journal of Materials Science-Materials in Electronics, 2022,33(32): 24734-24740.

10.Yan,Yu; Li,Jia Cheng; Chen,Yu Ting; Wang,Xiang Yu; Cai, Gang Ri; Park, Hyeon Woo; Kim, Ji Hun; Zhao, Jin Shi*and Hwang, Cheol Seong* “Area-Type Electronic Bipolar Switching Al/TiO1.7/TiO2/Al Memory with Linear Potentiation and Depression Characteristics”,ACS Applied Materials & Interfaces, 2021, 13 (33): 39561-39572.

11.Zhao, Jin Shi; Guo, Shu Qin; Li, Jia Cheng; Li, Ying Chen; and Zhou, Li Wei; “Effect of Voltage Divider Layer on Self-current Compliance Resistive Switching in Ta/TaOx/ITO Structure with an Ultra-low Power Consumption”,Applied Physics Letters, 2021,118: 042103.

12.Zhao, Jin Shi; Li, Ying Chen; Li, Jia Cheng; and Zhou Li Wei, “Role and Optimization of Thermal Rapid Annealing in Ta/TaOx/Ru Based Resistive Switching Memory”,Vacuum, 2021, 191:11039.

13.Zhao, Jin Shi; Li, Jia Cheng; Hao, Chen Yang; Li Qiu Yang Li, Mi, Wei; Qiang, Xiaoyong and Zhou, Li Wei “Low Pressure Thermal Annealed Fabrication of VO2 on Glass with Excellent Optical Properties”,Materials Science in Semiconductor Processing, 2021, 126: 105658.

14.Chen, Yu Ting; Yan, Yu; Wu, Jian Wen; Wang, Chen; Lin, Jun Ye;Zhao, Jin Shi*and Hwang, Cheol Seong; “Electroforming-Free, Flexible, and Reliable Resistive Random-Access Memory Based on an Ultrathin TaOx Film”,ACS Applied Materials & Interfaces, 2020, 12(9): 10681-10688

15.Zhao, Jin Shi; Wang, Chen; Yan, Yu; Chen, Yu Ting; Sun, Wen Tao; Li, Jun Ye; Wang, Xiang Yu; Mi, Wei; Song Dian You* and Zhou, Li Wei*, “The Effect of High Resistivity AlOδ Layer on Low-Power Consumption of TaOx Based Resistive Switching Memory”,Vacuum, 2020, 174, 109186,.

16.Zhao, Jin Shi; Zhang, Ming; Wan, Shang Fei; Ying, Zheng Chun* and Hwang, Cheol Seong*; “Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO2/Al/Polyimide Structure”,ACS Applied Materials & Interfaces, 2018, 10(2): 1828-1835.

17.Wan, Shang Fei; Yan, Yu; Wang, Chen; Yang, Zheng Chun; Zhao,Jin Shi Zhao*; “Impact of Potential Barrier on Electronic Resistive Switching Performance Based on Al/TiOx/Al Structure”,Vacuum, 2018, 156: 91-96.

18.Wang, Yi Chuan; Yan, Yu; Wang, Chen; Chen, Yu Ting; Li, Jun Ye;Zhao, Jin Shi*and Hwang, Cheol Seong;“Controlling the Thin Interfacial Buffer Layer for Improving the Reliability of the Ta/Ta2O5/Pt Resistive Switching Memory”,Applied Physics Letters, 2018, 113: 072902.

19.Yang, Zheng Chun; Zhao, Wen Liang; Wang, Jian Yun; Chen, Ran; Li, Xuan; Xue, Tao; Zhang, Kai Liang andZhao, Jin Shi*; “Fabrication of Nickel/Multi-Layer Graphene/Manganese Dioxide Hybrid Film as Enhanced Micro-Supercapacitor Devices”,Science of Advanced Materials, 2018, 10(2): 215-219.

20.Li, Xiang Yuan; Shao, Xing Long; Wang, Yi Chuan; Jiang, Hao; Hwang, Cheol Seong* andZhao, Jin Shi*; “Thin TiOx Layer As a Voltage Divider Layer Located at the Quasi-Ohmic Junction in the Pt/Ta2O5/Ta Resistance Switching Memory”,Nanoscale, 2017, 9(6): 2358.

21.Zhao, Wen Liang; Zhang, Ming; Pan, Peng; Song, Dian You; Huang, Sheng Ming; Wei, Jun; Li, Xuan; Qi, Wen; Zhang, Kailiang andZhao, Jin Shi*; “Design and Fabrication of Flexible Supercapacitor Devices by Using Mesoporous Carbon/Polyaniline Ink”,Surface & Coating Technology, 2017, 320: 595-600.

22.Jiang, Hao; Li, Xiang Yuan; Chen, Ran; Shao, Xing Long; Yoon, Jung Ho; Hu, Xi Wen Hwang, Cheol Seong* andZhao, Jin Shi;*“Bias-Polarity-Dependent Resistance Switching in W/SiO2/Pt and W/SiO2/Si/Pt Structures”,Scientific Reports, 2016, 6: 22216.

23.Shao, Xing Long; Kim, Kyung Min; Yoon, Kyung Jean; Song, Seul Ji; Yoon, Jung Ho; Kim, Hae Jin; Park, Tae Hyung; Kwon, Dae Eun; Kwon, Young Jae; Kim, Yu Min; Hu, Xi Wen;Zhao, Jin Shi*and Hwang, Cheol Seong*; “A Study of the Transition Between the Non-polar and Bipolar Resistance Switching Mechanisms in the TiN/TiO2/Al Memory”,Nanoscale, 2015, 8(36): 16455-16466.

24.Shao, Xing Long; Zhou, Li Wei; Yoon, Kyung Jean; Jiang, Hao;Zhao, Jin Shi*; Zhang, Kai Liang; Yoo,Si Jung and Hwang, Cheol Seong; “Electronic Resistance switching in the Al/TiOx/Al structure for forming-free and area-scalable memory”,Nanoscale, 2015, 7: 11063–11074.

25.Zhou, Li Wei; Shao, Xing Long; Li, Xiang Yuan; Jiang, Hao; Chen, Ran; Yoon, Kyung Jean; Kim, Hae Jin; Zhang, Kailiang;Zhao, Jin Shi*and Hwang, Cheol Seong*, “Interface Engineering for Improving Reliability of Resistance Switching in Cu/HfO2/TiO2/Pt Structure”,Applied Physics Letters, 2015, 107: 072901-3.2.

授权专利：

1.Jin Shi Zhao; Jang Eun Lee; In Gyu Baek; Se Chung Oh; Kyung Tae Nam; Eun Kyung Yim ;Semiconductor Devices Having Resistive Memory Element, 2008-9-4, 美国, US7838863B2.

2.Hong Sik Yoon; Jin Shi Zhao; In Gyu Baek; Hyun Jun Sim; Min Young Park ; SemiconductorMemory Device, 2010-6-24, 美国, US8581346B2.

3.Hong SiK Yoon; Jin Shi Zhao; In Gyu Baek; Hyun Jun Sim; Min Young Park ; NonvlatileMemory Device, 2010-4-22, 美国, US8331152B2.

4.Hong Sik Yoon; Jin Shi Zhao; In Gyu Baek; Hyun Jun Sim; Min Young Park ; SemiconductorMemory Device, 2012-9-11, 美国, US8264018B2.

5.Jin Shi Zhao; Jang Eun Lee ; Bipolar Switching Type Nonvolatile Memory Device HavingTunneling Layer, 2008-2-26, 韩国, KR100809724.

6.赵金石; 邵兴隆 ; 一种自发生长金属纳米晶颗粒的P／N 型叠 层阻变存储器, 2014-10-15, 中国,201210410617.1.

7.赵金石; 邵兴隆; 马辰铭; 周立伟; 陈长军 ; 一种多阻态阻变存储器, 2015-4-8, 中国,201310078256.X.

8.赵金石; 张楷亮 ; 一种利用碳纳米管作为固态电解的阻变存储器, 2015-4-15, 中国,201010593266.3.

获奖：

1.天津市高校学科领军人才。

2.天津市创新团队负责人。