基本情况：

姓名：李微

学历学位：博士研究生

职称：教授

研究方向：半导体光电器件

邮箱：cliwei618@126.com

手机号：13821175655

办公地点：29-339

所在团队名称：先进高效光电器件团队

团队负责人：李微

可招收硕博专业：电子科学与技术、集成电路科学与工程、集成电路工程

项目：

1.科技部“863”项目，规模化铜铟镓硒薄膜太阳电池成套制造工艺技术研发，主持

2.国家自然科学基金青年科学基金项目，K、Na共掺对柔性衬底CIGS薄膜表面、异质结界面微区调控的机理研究，主持

3.装备预研教育部联合基金，基于柔性可穿戴用有机/无机杂化太阳电池组件的研究，主持

4.横向课题，电镀铜薄膜技术开发，主持

5.横向课题，高温处理对硅片特性参数的研究项目，主持

6.横向课题，柔性砷化镓太阳电池衬底电镀金属层研究，主持

论文：

1.Fabrication of reduced graphene oxide/manganese oxide ink for 3D-printing technology on the application of high-performance supercapacitors；JOURNAL OF MATERIALS SCIENCE；56(13)、8102-8114；2021

1.Controllable (h k 1) Preferred Orientation of Sb2S3 Thin Films Fabricated by Pulse Electrodeposition, Solar Energy Materials and Solar Cells, 253 (2023), 112208

2. Application of poly-Si/SiOx passivating contact in x-ray silicon pixel detector, Applied Physics A, 128 (2022) 808.

3. Sulfurization of Electrodeposited Sb/Cu Precursors for CuSbS2: Potential Absorber Materials for Thin-Film Solar Cells. Frontiers in Materials, 8 (2022) , DOI: 10.3389/fmats.2021.818596.

4. Smooth Cu electrodeposition for Cu(In, Ga)Se2 thin-film solar cells: Dendritic clusters elimination by Ag buffer layer. Energy Reports, 8 (2022) 1847–1852.

5. Electrodeposition assisted sol-gel process to prepare CZTS thin films. Materials Science in Semiconductor Processing 148 (2022) 106784

6. Interface passivation and band alignment of high efficiency Cu(In, Ga)Se2 solar cells: Application of Mo(OxSe1-x)2 buffer layer at Mo/ Cu(In, Ga)Se2 interface, Optical Materials, 133 (2022), 113059

7. Influences of alkali incorporation and electrodeposited metal layer on formation of MoS 2 in CZTS thin films. Materials Science in Semiconductor Processing 2021, 134.

8. wxAMPS theoretical study of the bandgap structure of CZTS thin film to improve the device performance. Optoelectronics Letters 2021, 17 (8), 475-481, DOI: 10.1007/s11801-021-0159-6.

9. In situ observation of electric‑field induced magnetic domain evolution in (Ba,Ca)(Ti,Zr)O3–CoFe2O4 multiferroic films, Applied Physics A, 54 (2020) 126

10. Effect of Cu content in CIGSe absorber on MoSe2 formation during post-selenization process. Materials Science in Semiconductor Processing, 2020, 121.

11.Application of polycrystalline silicon carbide thin films as the passivating contacts for silicon solar cells,Sol Energ Mater Sol Cells, 2020, 110329

12.Effect of sulfurization temperature on the properties of CuIn(S,Se)2 thin films fabricated from electrodeposited CuInSe2 precursors, Superlattices and Microstructures, 122 (2018) 614–623

专利：

1.一种新型大晶粒ACZTS吸收层的制备方法，发明专利，天津理工大学；专利号：ZL202011092523.5

2. 电沉积法与溶胶凝胶法相结合制备CZTS吸收层的方法，发明专利，天津理工大学；专利号：ZL202011091251.7